MB84VA2006 Datasheet, PDF (27/29 Pages) Fujitsu Component Limited. – 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM

MB84VA2006-10/MB84VA2007-10
• CE2s Controlled Data Retention Mode (Note 3)
VCCs
DATA RETENTION MODE
2.7 V
CE2s
VIH
tCDR
tR
VIL
0.2 V
GND
Notes: 1. In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to Vccs-0.2V or Vss
to 0.2V during data retention mode. Other input and input/output pins can be used between -0.3V to
Vccs+0.3V.
2. When CE1s is operating at the VIH min. level (2.2 V), the standby current is given by ISB1s during the
transition of VCCs from 3.6 to 2.2 V.
3. In CE2s controlled data retention mode, input and input/output pins can be used between between
-0.3V to Vccs+0.3V.
s PIN CAPACITANCE
Parameter
Symbol
Parameter Description
CIN
COUT
CIN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Note: Test conditions TA = 25°C, f = 1.0 MHz
Test Setup
VIN = 0
VOUT = 0
VIN = 0
Typ.
Max.
Unit
T.B.D
T.B.D
pF
T.B.D
T.B.D
pF
T.B.D
T.B.D
pF
s HANDLING OF PACKAGE
Please handle this package carefully since the sides of packages are right angle.
s CAUTION
1.)The high voltage (VID) can not apply to address pins and control pins except RESET. Therefore, it can not
use autoselect and sector protect function by applying the high voltage (VID) to specific pins.
2.)For the sector protection, since the high voltage (VID) can be applied to the RESET, it can be protected the
sector useing "Extended sector protect" command.
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