MB84VA2106 Datasheet, PDF (20/29 Pages) Fujitsu Component Limited. – 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM

MB84VA2106-10/MB84VA2107-10
• RY/BY Timing Diagram during Write/Erase Operations (Flash)
CEf
The rising edge of the last WE signal
WE
Entire programming
or erase operations
RY/BY
tBUSY
• RESET, RY/BY Timing Diagram (Flash)
WE
RESET
RY/BY
tRP
tRB
tREADY
• Temporary Sector Unprotection (Flash)
VCC
VID
3V
RESET
CE
WE
RY/BY
20
tVCS
tVIDR
tVLHT
3V
tVLHT
Program or Erase Command Sequence
Unprotection period
tVLHT