MB84VA2106 Datasheet, PDF (13/29 Pages) Fujitsu Component Limited. – 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM

MB84VA2106-10/MB84VA2107-10
• Read Only Operations Characteristics (Flash)
Parameter
Symbols
JEDEC Standard
Description
tAVAV
tRC Read Cycle Time
tAVQV
tACC Address to Output Delay
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
—
tCEf
tOE
tDF
tDF
tOH
tREADY
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CEf or OE, Whichever Occurs First
RESET Pin Low to Read Mode
Note: Test Conditions–Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
Test
Setup
—
CEf = VIL
OE = VIL
OE = VIL
—
—
—
—
—
-10
(Note)
Unit
Min. Max.
100
—
ns
—
100 ns
—
100 ns
—
40
ns
—
30
ns
—
30
ns
0
—
ns
—
20
µs
13