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MB85RS1MTPNF-G Datasheet, PDF (15/40 Pages) Fujitsu Component Limited. – 1M (128 K × 8) Bit SPI | |||
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MB85RS1MT
â ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Condition
Value
Unit
Min
Typ
Max
0 ⤠CS< VDD
â¯
â¯
200
Input leakage current*1
|ILI|
CS = VDD
â¯
â¯
WP, HOLD, SCK
SI = 0 V to VDD
â¯
â¯
1
μA
1
Output leakage current*2
|ILO|
SO = 0 V to VDD
â¯
â¯
1
μA
SCK = 1 MHz
â¯
0.77
â¯
mA
SCK = 10 MHz
â¯
2.3
â¯
mA
Operating power supply current IDD
SCK = 25 MHz
â¯
4.85
â¯
mA
SCK = 30 MHz
â¯
5.7
9.5
mA
Standby current
ISB SCK = SI = CS = VDD
â¯
25
120
μA
Sleep current
IZZ
CS = VDD
All inputs VSS or VDD
â¯
â¯
10
μA
Input high voltage
VIH VDD = 1.8 V to 3.6 V VDD Ã 0.7
â¯
VDD + 0.5 V
Input low voltage
VIL VDD = 1.8 V to 3.6 V â 0.5
â¯
VDD Ã 0.3 V
Output high voltage
VOH
IOH = â 2 mA
VDD â 0.5
â¯
â¯
V
Output low voltage
VOL
IOL = 2 mA
â¯
â¯
0.4
V
Pull up resistance for CS
RP
â¯
18
33
80
kΩ
*1 : Applicable pin : CS, WP, HOLD, SCK, SI
*2 : Applicable pin : SO
DS501-00022-6v0-E
15
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