MB85RS1MTPH-G Datasheet, PDF (15/40 Pages) Fujitsu Component Limited. – 1M (128 K × 8) Bit SPI

MB85RS1MT
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Parameter
Symbol
Condition
Value
Unit
Min
Typ
Max
0 ≤ CS< VDD
⎯
⎯
200
Input leakage current*¹
|ILI|
CS = VDD
⎯
⎯
WP, HOLD, SCK
SI = 0 V to VDD
⎯
⎯
1
μA
1
Output leakage current*²
|ILO|
SO = 0 V to VDD
⎯
⎯
1
μA
SCK = 1 MHz
⎯
0.77
⎯
mA
SCK = 10 MHz
⎯
2.3
⎯
mA
Operating power supply current IDD
SCK = 25 MHz
⎯
4.85
⎯
mA
SCK = 30 MHz
⎯
5.7
9.5
mA
Standby current
ISB SCK = SI = CS = VDD
⎯
25
120
μA
Sleep current
IZZ
CS = VDD
All inputs VSS or VDD
⎯
⎯
10
μA
Input high voltage
VIH VDD = 1.8 V to 3.6 V VDD × 0.7
⎯
VDD + 0.5 V
Input low voltage
VIL VDD = 1.8 V to 3.6 V − 0.5
⎯
VDD × 0.3 V
Output high voltage
VOH
IOH = − 2 mA
VDD − 0.5
⎯
⎯
V
Output low voltage
VOL
IOL = 2 mA
⎯
⎯
0.4
V
Pull up resistance for CS
RP
⎯
18
33
80
kΩ
*1 : Applicable pin : CS, WP, HOLD, SCK, SI
*2 : Applicable pin : SO
DS501-00022-6v0-E
15