MB85RS1MTPH-G Datasheet, PDF (1/40 Pages) Fujitsu Component Limited. – 1M (128 K × 8) Bit SPI

FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
DS501-00022-6v0-E
1M (128 K × 8) Bit SPI
MB85RS1MT
■ DESCRIPTION
MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
MB85RS1MT adopts the Serial Peripheral Interface (SPI).
The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS1MT can be used for 10¹³ read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E²PROM.
MB85RS1MT does not take long time to write data like Flash memories or E²PROM, and MB85RS1MT takes
no wait time.
■ FEATURES
• Bit configuration
: 131,072 words × 8 bits
• Serial Peripheral Interface
: SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
• Operating frequency
: 1.8 V to 2.7 V, 25 MHz (Max)
2.7 V to 3.6 V, 30 MHz (Max)
For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max)
• High endurance
: 10¹³ times / byte
• Data retention
: 10 years (+85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
• Operating power supply voltage : 1.8 V to 3.6 V
• Low power consumption
: Operating power supply current 9.5 mA (Max@30 MHz)
Standby current 120 μA (Max)
Sleep current 10 μA (Max)
• Operation ambient temperature range : -40 °C to +85 °C
• Package
: 8-pin plastic SOP (FPT-8P-M02)
8-pin plastic WLP (WLP-8P-M01)
8-pin plastic DIP (DIP-8P-M03)
RoHS compliant
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2016.10