MB85R1002ANC-GE1 Datasheet, PDF (11/16 Pages) Fujitsu Component Limited. – 1 M Bit (64 K × 16)

MB85R1002A
■ POWER ON/OFF SEQUENCE
tPD
tR
tPU
VCC
CE2
3.0 V
VIH (Min)
VCC
CE2
3.0 V
VIH (Min)
1.0 V
VIL (Max)
0V
CE2 ≤ 0.2 V
CE1 > VCC × 0.8*
CE1 : Don't Care
CE1 > VCC × 0.8*
1.0 V
VIL (Max)
0V
CE1
CE1
* : CE1 (Max) < VCC + 0.5 V
Notes: • Use either of CE1 or CE2, or both for disable control of the device.
• Because turning the power on from an intermediate level may cause malfunctions,
when the power is turned on, VCC is required to be started from 0 V.
• If the device does not operate within the specified conditions of read cycle, write cycle,
power on/off sequence, memory data can not be guaranteed.
• When turning the power on or off, it is recommended that CE2 is connected to ground
to prevent unexpected writing.
Parameter
CE1 LEVEL hold time for Power OFF
CE1 LEVEL hold time for Power ON
Power supply rising time
Symbol
tPD
tPU
tR
(within recommended operating conditions)
Value
Unit
Min
Typ
Max
85
⎯
⎯
ns
85
⎯
⎯
ns
0.05
⎯
200
ms
■ NOTES ON USE
After the IR reflow completed, it is not guaranteed to hold the data written prior to the IR reflow.
DS501-00004-1v0-E
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