MBM29F033C Datasheet, PDF (1/46 Pages) Fujitsu Component Limited. – 32M (4M X 8) BIT

FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
32M (4M × 8) BIT
DS05-20869-3E
MBM29F033C-70/-90/-12
s FEATURES
• Single 5.0 V read, write, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Pinout and software compatible with single-power supply Flash
Superior inadvertent write protection
• 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type)
• Minimum 100,000 write/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
Uniform sectors of 64K bytes each
Any combination of sectors can be erased. Also supports full chip erase
• Embedded Erase^TM Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded Program^TM Algorithms
Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/BUSY output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Low VCC write inhibit ≤ 3.2 V
• Hardware RESET pin
Resets internal state machine to the read mode
• Erase Suspend/Resume
Supports reading or programming data to a sector not being erased
• Sector group protection
Hardware method that disables any combination of sector groups from write or erase operation (a sector group
consists of 4 adjacent sectors of 64K bytes each)
• Temporary sector groups unprotection
Hardware method temporarily enable any combination of sectors from write or erase operations
Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.