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1MBI600U4B-120 Datasheet, PDF (9/13 Pages) Fuji Electric – IGBT MODULE
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Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
1400
1200
VGE=20V 15V 12V
1000
800
10V
600
400
200
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
1400
1200
Tj=25oC
1000
Tj=125oC
800
600
400
200
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25oC
100.0
Cies
10.0
Cres
Coes
1.0
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
1400
1200
VGE=20V 15V
12V
1000
800
600
10V
400
200
0
0
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
10
8
6
4
2
Ic=1200A
Ic=600A
Ic=300A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=600A, Tj=25oC
VGE
VCE
0
0
500 1000 1500 2000 2500 3000
Gate charge : Qg [ nC ]
MS5F6062
a
9
13
H04-004-03a
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