1MBI600U4B-120 Datasheet, PDF (10/13 Pages) Fuji Electric – IGBT MODULE

Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.1Ω, Tj=25^oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.1Ω, Tj=125^oC
10000
1000
100
toff
ton
tr
tf
10
0
200 400 600 800 1000 1200
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=25^oC
10000
ton
1000
toff
tr
100
tf
10
0.1
1.0
10.0
Gate resistance : RG [ Ω ]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=125^oC
140
120
Eoff
100
80
Eon
60
40
Err
20
0
0.1
1.0
10.0
Gate resistance : RG [ Ω ]
100.0
1000
100
ton
toff
tr
tf
10
0
200 400 600 800 1000 1200
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.1Ω
120
Eoff(125^oC)
100
80
Err(125^oC)
60
Eoff(25^oC)
Eon(125^oC)
40
Err(25^oC)
Eon(25^oC)
20
0
0
200 400 600 800 1000 1200
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 1.1Ω, Tj <= 125^oC
1400
1200
1000
800
600
400
200
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
MS5F6062
10
a
13
H04-004-03a