1MBI3600UD-170 Datasheet, PDF (9/13 Pages) Fuji Electric – IGBT MODULE

Collector current vs. Collector-Emitter voltage (typ.)
VGE=+15V,sense terminal
8000
7000
Tj=25°C Tj=125°C
6000
5000
4000
3000
2000
1000
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=125°C,sense terminal
10
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, sense terminal
8000
7000
VGE=20V 15V 12V
6000
5000
10V
4000
3000
9V
2000
1000
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
8
6
4
Ic=7200A
2
Ic=3600A
Ic=1800A
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000.0
Cies
100.0
10.0
Cres
Coes
Dynamic Gate charge (typ.)
Tj= 25°C
VCE
VGE
1.0
0
10
20
30
Collector-Emitter voltage : VCE [V]
0
0
4000
8000
12000
16000
Gate charge : Qg [ nC ]
MS5F5930
9
13
H04-004-03a