1MBI3600UD-170 Datasheet, PDF (10/13 Pages) Fuji Electric – IGBT MODULE

Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=0.1Ω, Rgoff=0.2Ω, Tj= １25°C
10
toff
1 _ton
tf
tr
0.1
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=3600A, VGE=±15V, Tj= 125°C
10.0
ton
toff
1.0
tr
tf
0.01
0
1000
2000 3000 4000 5000
Collector current : Ic [ A ]
6000
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=0.1Ω, Rgoff=0.2Ω,Tj=125°C
2500
2000
Eoff
Eon
1500
Err
1000
500
0
0 1000 2000 3000 4000 5000 6000
Collector current : Ic [ A ] , Forward current : IF [ A ]
8000
7000
6000
5000
4000
3000
2000
1000
0
0
Reverse bias safe operating area (max.)
±VGE=15V,Tj = 125°C / chip
500
1000
1500
Collector - Emitter voltage : VCE [ V ]
2000
0.1
0.1
1.0
10.0
Gate resistance : Rg [ Ω ]
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=3600A, VGE=±15V, Tj= 125°C
12000
10000
Eon
8000
6000
4000
2000
0
0.1
Eoff
1.0
Gate resistance : Rg [ Ω ]
Err
10.0
MS5F5930
10
13
H04-004-03a