YG962S6R Datasheet, PDF (5/12 Pages) Fuji Electric – SILICON DIODE

Test Test
No. Items
1 High Temp.
Storage
2 Low Temp.
Storage
3 Temperature
Humidity
Storage
4 Temperature
Humidity
Bias
5 Unsaturated
Pressurized
Vapor
6 Temperature
Cycle
7 Thermal Shock
8 Steady state
Operating life
9 Intermittent
Operating
Life
10 High Temp.
Reverse Bias
Testing methods and Conditions
Reference Sampling Acceptance
Standard number number
EIAJ ED4701
Temperature : stg max
B-111A
22
Test duration : 1000h
Temperature : Tstg min
B-112A
22
Test duration : 1000h
Temperature : 85±2°C
B-121A
Relative humidity : 85±5%
test code C
22
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
B-122A
22
Bias Voltage : V_RRM 0.8
test code C
Test duration : 1000h
Temperature : 120±2°C
Relative humidity : 85±5%
B-123A
22
Vapor pressure : 170kPa
test code B
Test duration : 96h
High temp.side : Tstg max
Room temp. : 5 35
Low temp.side : Tstg min
B-131A
22
Duration time : HT 30min,RT 5min LT 30min
Number of cycles : 100 cycles
Fluid : pure water(running water)
High temp.side : 100+0/-5°C
B-141A
22
Low temp.side : 0+5/-0°C
test code A
Duration time : HT 5min,LT 5min
Number of cycles : 100 cycles
Ta=25±5°C
Rated load
D-402
22
Test duration : 1000h
Tj=Tjmax 50
3
D-403
22
Test duration : 10000cy
Temperature : Ta= 100 °C
Bias Voltage : V_R=V_RRM duty=1/2
D-404
22
Test duration : 1000h
F
I_R USL x 5
V_F USL x 1.1
Fuji Electric Co.,Ltd.
ç MS5D1436 5/12
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