YA981S6R Datasheet, PDF (5/12 Pages) Fuji Electric – SILICON DIODE

Test
No.
Test
items
1
High temp.
Storage
2
Low temp.
Storage
Temperature
3 humidity
storage
Temperature
4 humidity
bias
Unsaturated
5 pressurized
vapor
6
Temperature
cycle
7
Thermal
shock
Steady state
8 operating
life
Intermittent
9 operating
life
High temp.
10 Reverse
bias
Testing methods and conditions
Temperature :Ì©stg max
Test duration : 1000h
Temperature :Ì©stg min
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Bias voltage : V_RRM× 0.8
Test duration : 1000h
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48h
High temp. side : Tstg max
Room temp. : 5ʙ35ˆ
Low temp. side : Tstg min
Duration time : HT 30min,RT 5min LT 30min
Number of cycles : 100 cycles
Fluid : pure water(running water)
High temp. side : 100+0/-5°C
Low temp. side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100 cycles
Ta=25±5°C
Rated load
Test duration : 1000h
Tj=Tjmax ʙ50ˆ
3min ON, 3min OFF
Test duration : 10000cycles
Temperature : Ta=100 °C
Bias voltage : VR=V_RRM duty=1/2
Test duration : 1000h
Reference
standard
EIAJ ED4701
EIAJ
ED4701/201
EIAJ
ED4701/202
EIAJ
ED4701/103
test code C
Sampling
number
22
22
22
EIAJ
ED4701/103
22
test code C
Acceptance
number
EIAJ
ED4701/103
22
test code F
EIAJ
(0 : 1)
22
ED4701/105
EIAJ
ED4701/307
22
test code A
ʵ
22
EIAJ
22
ED4701/106
EIAJ
22
ED4701/101
Failure criteria




I_R ʽUSL x 5
V_FʽUSL x 1.1
USL : Upper specification limit


Fuji Electric Device Technology Co.,Ltd.


MS5D3300

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^H04-004-03a