1MBI200HH-120L-50 Datasheet, PDF (5/7 Pages) Fuji Electric – IGBT MODULE 1200V / 200A / 1 in one package

1MBI200HH-120L-50
FWD
Forward current vs. Forward on voltage for Inverse Diode (typ.)
chip
400
Tj=125°C
Tj=25°C
300
200
100
0
0
2
4
6
8
10
Forward on voltage : VF [ V ]
Inverse Diode
Forward current vs. Forward on voltage (typ.)
chip
200
Tj=25°C Tj=125°C
150
100
50
0
0
1
2
3
4
Forward on voltage : VF [ V ]
Thermistor
Temperature characteristic (typ.)
100
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
FWD
Reverse recovery characteristics (typ.)
VCC=600V, VGE=±15V, RG=3.1Ω
100
Irr (125°C)
Irr (25°C)
trr (125°C)
trr (25°C)
10
0
100
200
300
Forward current : IF [ A ]
1.000
0.100
Transient thermal resistance (max.)
Inverse Diode
FWD
IGBT
0.010
0.001
0.001
0.010
0.100
Pulse width : Pw [ sec ]
1.000
10
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [°C ]
5