1MBI200HH-120L-50 Datasheet, PDF (2/7 Pages) Fuji Electric – IGBT MODULE 1200V / 200A / 1 in one package

1MBI200HH-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage collector current
ICES
Gate-Emitter leakage current
IGES
Gate-Emitter threshold voltage
VGE(th)
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse Current
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*5)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
VF
(chip)
IR
VF
(terminal)
VF
(chip)
trr
R lead
Resistance
R
B value
B
Note *5: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
VCE = 1200V
VGE = 0V
VCE = 0V
VGE=±20V
VCE = 20V
IC = 200mA
Tj= 25°C
IC = 200A
VGE=15V
Tj=125°C
Tj= 25°C
Tj=125°C
VCE=10V,VGE=0V,f=1MHz
VCC = 600V
IC = 200A
VGE = ±15V
RG = 3.1 Ω
LS = 20nH
IF = 75A
VGE=0V
VCE = 1200V
IF = 200A
VGE=0V
IF = 200A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
T = 25°C
T = 125°C
T = 25/50°C
Items
Symbols Conditions
IGBT
Thermal resistance(1device)
Rth(j-c)
Inverse Diode
FWD
Contact Thermal resistance
Rth(c-f)
with Thermal Compound (*6)
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
-
-
2.0
Units
mA
-
-
400
nA
5.7
6.2
6.7
V
-
3.25 3.55
-
-
4.15
-
3.10 3.40
V
-
4.00
-
-
18
-
nF
-
0.20 0.50
-
0.10 0.40
-
0.30
-
μs
-
0.30 0.70
-
0.05 0.20
-
1.80 2.30
-
-
1.95
-
1.70 2.15
V
-
1.85
-
-
-
1.0
mA
-
8.15 9.40
-
-
4.45
-
7.90 9.15
V
-
4.20
-
-
-
0.20
μs
-
0.70
-
mΩ
-
5000
-
465
495
520
Ω
3305 3375 3450
K
Characteristics
min. typ. max.
-
-
0.067
-
-
0.460
-
-
0.150
-
0.0250
-
Units
°C/W
2