YG855C15R Datasheet, PDF (4/6 Pages) Fuji Electric – Schottky Barrier Diode

YG855C15R
Current Derating (Io-Tc) (max.)
160
150
140
130
120
110
DC
100
Sine wave λ=180°
90
Square wave λ=180°
80
Square wave λ=120°
70
60
360°
50
I₀
40
λ
VR=75V
Square wave λ=60°
30
0
5
10
15
20
25
30
Ｉｏ Average Output Current （Ａ）
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Surge Capability (max.)
FUJI Diode
http://www.fujisemi.com
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)
100
10
1
10
100
Number of Cycles at 50Hz
4