YG855C15R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YG855C15R
Forward Characteristic (typ.)
10
Tj=150℃
Tj=125℃
Tj=100℃
Tj=25℃
1
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
ＶＦ Forward Voltage （Ｖ）
Forward Power Dissipation (max.)
16
360°
14
I₀
λ
12
10
Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
8
Square wave λ=180°
DC
6
4
2
Per 1element
0
0
2
4
6
8
10
12
Ｉｏ Average Output Current （Ａ）
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
10⁵
Tj=150℃
10⁴
Tj=125℃
10³
Tj=100℃
10²
Tj= 25℃
10¹
10⁰
10^-1
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
ＶR Reverse Voltage （Ｖ）
Reverse Power Dissipation (max.)
7
360°
DC
6
VR
α
5
4
α=180°
3
2
1
0
0
20
40
60
80
100 120 140 160
ＶＲ Reverse Voltage （Ｖ）
3