FGW25N120VD Datasheet, PDF (4/8 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 1200V / 25A

FGW25N120VD
Graph.7
Typical Capacitance
VGE=0V, f=1MHz, Tj=25^ºC
10⁴
Cies
10³
Coes
10²
Cres
10¹
10⁰
10^-2
10^-1
10⁰
10¹
VCE [V]
Graph.9
Typical switching time vs. IC
Tj=175^ºC, VCC=600V, L=500µH
VGE=15V,RG=10Ω
1000
td(off)
100
tf
td(on)
10
tr
1
0
10
20
30
40
50
60
Collector Current IC [A]
Graph.11
Typical switching losses vs. IC
Tj=175^ºC, VCC=600V, L=500µH
VGE=15V, RG=10Ω
12
10
8
Eon
6
4
Eoff
2
0
0
10
20
30
40
50
60
Collector Current IC [A]
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
VCC=600V, IC=25A, Tj=25^ºC
20
15
VCC=600V
10
5
0B
0
50
100
150
200
250
300
Qg [nC]
Graph.10
Typical switching time vs. RG
Tj=175^ºC, VCC=600V, IC=25A, L=500µH
VGE=15V
1000
100
10
td(off)
tf
tr
td(on)
1
0
10
20
30
40
50
60
Gate Resistor Rg [Ω]
Graph.12
Typical switching losses vs. RG
Tj=175^ºC, VCC=600V, IC=25A, L=500µH
VGE=15V
6
5
Eon
4
Eoff
3
2
1
0
0
10
20
30
40
50
60
Gate Resistor Rg [Ω]
4