FGW25N120VD Datasheet, PDF (3/8 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 1200V / 25A

FGW25N120VD
Characteristics (Representative)
Graph.1
DC Collector Current vs TC
VGE≥+15V, Tj≤175^ºC
80
70
60
50
Tj≤175℃
40
30
20
10
0
25
50
75
100
125
150
175
Case Temperature [°C]
Graph.3
Typical Output Characteristics (VCE-IC)
Tj=25^ºC
50
40
V_GE= 20V
15V
30
12V
20
10V
10
8V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.5
Typical Transfer Characteristics
VGE=+15V
50
40
30
20
Tj=175℃ Tj=25℃
10
0
0
2
4
6
8
10
12
14
VGE [V]
3
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.2
Collector Current vs. switching frequency
VGE=+15V, TC≤175^ºC, VCC=600V, D=0.5,
RG=10Ω, TC=100^ºC
50
40
30
20
10
0
0
10
20
30
40
50
Collector-Emitter corrent : ICE [A]
Graph.4
Typical Output Characteristics (VCE-IC)
Tj=175^ºC
50
40
V_GE= 20V
15V
30
12V
20
10V
10
8V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.6
Gate Threshold Voltage vs. Tj
IC=25mA, VCE=20V
10
9
8
typ.
max.
7
6
min.
5
4
3
2
1
0
-50 -25 0
25 50 75 100 125 150 175
Tj [℃]