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| 2SK3601-01_03 Datasheet, PDF (4/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET | |||
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2SK3601-01
FUJI POWER MOSFET
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10â¦
103
tf
102
td(on)
101
tr
td(off)
100
10-1
100
101
102
ID [A]
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
100
90
80
70
60
50
40
30
20
10
0
0
1000
2000
3000
4000
5000
Drain Pad Area [mm 2]
Maximum Avalanche Current Pulsewidth
I =f(t ):starting Tch=25°C,Vcc=48V
102 AV
AV
Single Pulse
101
100
10-1
10-2
10-8
10-7
10-6
10-5
10-4
10-3
10-2
t [sec]
AV
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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