2SK3601-01_03 Datasheet, PDF (3/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3601-01
FUJI POWER MOSFET
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.18
VGS=
5.5V ^{6.0V 6.5V} 7.0V 7.5V
8V
0.15
0.12
0.09
10V
0.06
20V
0.03
0.00
0
10
20
30
40
50
60
ID [A]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10¹
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
150
125
100
max.
75
50
typ.
25
0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A, Tch=25°C
14
12
10
8
Vcc= 50V
6
4
2
0
0
10
20
30
40
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10⁰
Ciss
10
Coss
10^-1
1
10^-2
10^-1
10⁰
10¹
VDS [V]
Crss
10²
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
3