1MBI600V-120-50 Datasheet, PDF (4/7 Pages) Fuji Electric – IGBT MODULE (V series) 1200V / 600A / 1 in one package

1MBI600V-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.2Ω, Tj=125°C
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.2Ω, Tj=150°C
10000
1000
toff
1000
toff
ton
ton
tr
tr
100
tf
100
tf
10
0 200 400 600 800 1000 1200 1400
Collector current: Ic [A]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C
10000
toff
ton
1000
tr
100
tf
10
1
10
100
Gate resistance: RG [Ω]
10
0 200 400 600 800 1000 1200 1400
Collector current: Ic [A]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.2Ω, Tj=125°C, 150°C
160
140
120
100
80
60
40
20
0
0
Tj=125^oC
Eoff
Tj=150^oC
Eon
Err
200 400 600 800 1000 1200 1400
Collector current: Ic [A]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C
250
Tj=125^oC
Tj=150^oC
200
Eon
150
Eoff
100
50
0
1
Err
10
100
Gate resistance: RG [Ω]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, RG=1.2Ω, Tj=150°C, Ls=35nH
1400
1200
1000
800
600
400
200
0
0
400
800
1200 1600
Collector-Emitter voltage: VCE [V]
4