1MBI600V-120-50 Datasheet, PDF (3/7 Pages) Fuji Electric – IGBT MODULE (V series) 1200V / 600A / 1 in one package

1MBI600V-120-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1400
1200
VGE=20V 15V _12V
1000
800
600
10V
400
200
0
0
8V
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
1400
1200
Tj=25°C 125°C
150°C
1000
800
600
400
200
0
0
1
2
3
4
Collector-Emitter Voltage: VCE [V]
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
100
Cies
10
Cres
Coes
1
0
10
20
30
Collector-Emitter voltage: VCE [V]
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
1400
1200
1000
VGE= 20V 15V
12V
800
600
10V
400
200
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
10
8
6
4
2
Ic=1200A
Ic=600A
Ic=300A
0
5
10
15
20
25
Gate-Emitter Voltage: VGE [V]
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=600A, Tj= 25°C
VCE
VG
0
2000
4000
6000
Gate charge: Qg [nC]