1MBI400HH-120L-50 Datasheet, PDF (4/7 Pages) Fuji Electric – IGBT MODULE 1200V / 400A / 1 in one package

1MBI400HH-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.6Ω, Tj=25^oC
toff
ton
100
tr
tf
1000
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125^oC
toff
ton
tr
100
tf
10
0
100
200
300
400
500
Collector current : IC [ A ]
10
0
100
200
300
400
500
Collector current : IC [ A ]
10000
Switching time vs. Gate resistance (typ.)
VCC=600V, IC=400A, VGE=±15V, Tj=25^oC
toff
1000
ton
tr
100
tf
10
1
10
100
Gate resistance : RG [ Ω ]
Switching loss vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=1.6Ω
28
Eoff(125°C)
24
Eoff(25°C)
20
16
Err(125°C)
12
Eon(125°C)
8
Err(25°C)
Eon(25°C)
4
0
0
100
200
300
400
500
Collector current : IC [ A ]
Switching loss vs. Gate resistance (typ.)
VCC=600V, IC=400A, VGE=±15V, Tj=125^oC
80
Eon
60
Eoff
40
20
0
1
Err
10
100
Gate resistance : RG [ Ω ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 1.6Ω,Tj <= 125^oC
1000
800
600
400
200
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
4