1MBI400HH-120L-50 Datasheet, PDF (3/7 Pages) Fuji Electric – IGBT MODULE 1200V / 400A / 1 in one package

1MBI400HH-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C / chip
1000
15V 12V
800
VGE=20V
10V
600
400
8V
200
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
1000
800
Tj=25°C Tj=125°C
600
400
200
0
0
1
2
3
4
5
6
7
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
100.0
Cies
10.0
Coes
1.0
Cres
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C / chip
1000
15V 12V
800
VGE=20V
10V
600
400
8V
200
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
IC=800A
IC=400A
2
IC=200A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
VCC=600V, IC=400A, Tj=25^oC
VCE
VGE
0.1
0
10
20
Collector-Emitter voltage : VCE [ V ]
30
3
0
200 400 600 800 1000 1200
Gate charge : Qg [ nC ]