1MBI300HH-120L-50 Datasheet, PDF (4/7 Pages) Fuji Electric – IGBT MODULE 1200V / 300A / 1 in one package

1MBI300HH-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=2.1Ω, Tj=25^oC
1000
Switching time vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=2.1Ω, Tj=125^oC
toff
toff
ton
ton
100
100
tr
tr
tf
tf
10
0
100
200
300
400
Collector current : IC [ A ]
10000
Switching time vs. Gate resistance (typ.)
VCC=600V, IC=300A, VGE=±15V, Tj=25^oC
1000
toff
ton
tr
100
tf
10
1
10
100
Gate resistance : RG [ Ω ]
Switching loss vs. Gate resistance (typ.)
VCC=600V, IC=300A, VGE=±15V, Tj=125^oC
100
Eon
80
60
40
20
0
1
Eoff
Err
10
100
Gate resistance : RG [ Ω ]
4
10
0
100
200
300
400
Collector current : IC [ A ]
Switching loss vs. Collector current (typ.)
VCC=600V, VGE=±15V, RG=2.1Ω
20
Eoff(125°C)
16
Eoff(25°C)
12
Err(125°C)
Eon(125°C)
8
Err(25°C)
Eon(25°C)
4
0
0
100
200
300
400
Collector current : IC [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 2.1Ω,Tj <= 125^oC
700
600
500
400
300
200
100
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]