1MBI300HH-120L-50 Datasheet, PDF (3/7 Pages) Fuji Electric – IGBT MODULE 1200V / 300A / 1 in one package

1MBI300HH-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C / chip
800
600
VGE=20V15V ^12V10V
400
200
8V
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
800
Tj=25°C Tj=125°C
600
400
200
0
0
1
2
3
4
5
6
7
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
100.0
Cies
10.0
Coes
1.0
Cres
0.1
0
10
20
Collector-Emitter voltage : VCE [ V ]
30
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C / chip
800
600
VGE=20V ^{15V 12V}
10V
400
8V
200
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
IC=600A
IC=300A
IC=150A
2
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
VCC=600V, IC=300A, Tj=25^oC
VCE
VGE
0
200
400
600
800
Gate charge : Qg [ nC ]