1MBI200U4H-120L-50 Datasheet, PDF (4/7 Pages) Fuji Electric – IGBT MODULE (U series) 1200V / 200A / 1 in one package

1MBI200U4H-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3Ω, Tj=25^oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3Ω, Tj=125^oC
1000
100
toff
ton
tr
tf
1000
100
ton
toff
tr
tf
10
0
100
200
300
400
Collector current : Ic [ A ]
10000
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj=25^oC
ton
1000
toff
tr
100
tf
10
1
10
100
Gate resistance : RG [Ω]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj=125^oC
50
40
Eon
30
Eoff
20
10
Err
0
1
10
100
1000
Gate resistance : RG [Ω]
4
10
0
100
200
300
400
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3Ω
30
Eoff(125^oC)
25
Err(125^oC)
20
Eon(125^oC)
Eoff(25^oC)
15
Eon(25^oC)
Err(25^oC)
10
5
0
0 50 100 150 200 250 300 350 400
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 3Ω, Tj <= 125^oC
500
400
300
200
100
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]