1MBI200U4H-120L-50 Datasheet, PDF (3/7 Pages) Fuji Electric – IGBT MODULE (U series) 1200V / 200A / 1 in one package

1MBI200U4H-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25^oC / chip
200
150
VGE=20V 15V
12V
100
50
0
0
10V
1
2
3
4
Collector-Emitter voltage : VCE [ V ]
8V
5
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
500
400
Tj=25^oC Tj=125^oC
300
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25^oC
100.0
Cies
10.0
Cres
1.0
Coes
0.1
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125^oC / chip
200
150
VGE=20V 15V
12V
100
50
0
0
10V
8V
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25^oC / chip
10
8
6
4
Ic=200A
2
Ic=100A
Ic=50A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=200A, Tj=25^oC
VCE
VGE
0
0
200
400
600
800
1000
Gate charge : Qg [ nC ]