1MBH15-120_01 Datasheet, PDF (4/5 Pages) Fuji Electric – Molded IGBT

1MBH15-120, 1MBH15D-120
Characteristics
1MBH15-120,1MBH15D-120
Switching time vs. RG
Vcc=600V, Ic=15A, VGE=±15V, Tj=25°C
1000
IGBT Module
Switching time vs. RG
Vcc=600V, Ic=15A, VGE=±15V, Tj=125°C
1000
100
100
Gate resistance : RG [ohm]
100
100
Gate resistance : RG [ohm]
Dynamic input characteristics
Tj=25°C
1000
Capacitance vs. Collector-Emitter voltage
25
10000
Tj=25°C
800
20
1000
600
15
400
10
100
200
5
0
0
10
0
50
100
150
200
0
5
10
15
20
25
30
35
Gate charge : Qg [nC]
Collector-Emitter voltage : VCE [V]
Reversed biased safe operating area
Typical short circuit capability
+VGE=15V, -VGE ^<= 15V, Tj ^<= 125°C, RG ^>= 120 ohm
Vcc=800V, RG=120 ohm, Tj=125°C
35
500
50
30
400
40
25
300
30
20
15
200
20
10
100
10
5
0
0
200
400
600
800
1000
1200
Collector-Emitter voltage : VCE [V]
0
0
5
10
15
20
25
Gate voltage : VGE [V]