1MBH15-120_01 Datasheet, PDF (3/5 Pages) Fuji Electric – Molded IGBT

1MBH15-120, 1MBH15D-120
Characteristics
1MBH15-120,1MBH15D-120
Collector current vs. Collector-Emitter voltage
Tj=25°C
50
40
30
20
10
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4
2
0
0
5
10
15
20
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=120 ohm, VGE=±15V, Tj=25°C
1000
Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=125°C
50
40
30
20
10
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4
2
0
0
5
10
15
20
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=600V, RG=120 ohm, VGE=±15V, Tj=125°C
1000
100
0
5
10
15
20
25
Collector current : Ic [A]
100
0
5
10
15
20
25
Collector current : Ic [A]