1MBG10D-060 Datasheet, PDF (4/4 Pages) Fuji Electric – Fuji Discrete Package IGBT

Reverse Biased Safe Operating Area
+ V_GE=15V, -V_GE<1 5 V , T _j<125°C, R_G>22 Ω
25
20
15
10
5
0
0
100 200 300 400 500 600 700
Collector-Emitter Voltage : V_CE [V]
Forward Voltage vs. Forward Current
25
T _j= 1 2 5 ° C 2 5 °C
20
15
10
5
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
Forward Voltage : V_F [V]
Typical Short Circuit Capability
V _CC= 4 0 0 V , R _G= 22 Ω , T_j=125°C
150
60
t_SC
I_SC
100
40
50
20
0
0
5
10
15
20
25
Gate Voltage : V_GE [V]
250
200
Reverse Recovery Characteristics vs. ^-di/_dt
I_F=10A, T _j=125°C
10
I_rr
8
150
6
100
4
50
0
0
2
t_rr
100
200 300 400
-di_{/dt [A/µsec]}
500
0
600
Transient Thermal Resistance
10¹
FWD
10⁰
10 ^-1
IGBT
10 ^-2
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
Pulse Width : P_W [sec]
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