1MBG10D-060 Datasheet, PDF (3/4 Pages) Fuji Electric – Fuji Discrete Package IGBT

Switching Time vs. R_G
V _CC=300V, I_C=10A, V_GE=±15V, T_j=25°C
1000
t_on
t _off
t_r
t_f
100
Switching Time vs. R_G
V _CC=300V, I _C=10A, V_GE=±15V, T_j=125°C
1000
t_off
t_on
t_f
t_r
100
10
0
100
200
Gate Resistance : R_G [Ω]
Capacitance vs. Collector-Emitter Voltage
T _j= 2 5 ° C
1000
100
C _ies
C _oes
10
0
C _res
5
10
15
20
25
30
35
Collector-Emitter Voltage : V_CE [V]
Reverse Recovery Time vs. Forward Current
150
V _R= 2 0 0 V , ^-di/_dt= 1 0 0 A / µ s e c
125°C
100
25°C
50
0
0
5
10
15
20
Forward Current : I_F [A]
10
0
100
200
Gate Resistance : R_G [Ω]
500
400
Dynamic Input Characteristics
T _j= 2 5 ° C
25
V =200V, 300V, 400V
CC
20
300
15
200
10
100
5
0
0
0
10
20
30
40
50
60
Gate Charge : Q_G [nQ]
Reverse Recovery Current vs. Forward Current
V _R=200V, ^-di/_dt=100A/µsec
5
125°C
4
3
25°C
2
1
0
0
5
10
15
20
Forward Current : I_F [A]