1MB30-060 Datasheet, PDF (4/4 Pages) Fuji Electric – Fuji Discrete Package IGBT

Reverse Biased Safe Operating Area
+ V _GE=15V, -V_GE<15V, T _j<125°C, R _G>8.2 Ω
70
60
50
40
30
20
10
0
0 100 200 300 400 500 600 700
Collector-Emitter Voltage : V_CE [V]
Forward Voltage vs. Forward Current
120
T_j=125°C _25°C
100
80
60
40
20
0
0
1
2
3
4
5
6
Forward Voltage : V_F [V]
500
400
Typical Short Circuit Capability
V _CC= 4 0 0 V , R _G=8.2Ω , T_j=125°C
50
t_SC
I_SC
40
300
30
200
20
100
10
0
0
5
10
15
20
25
Gate Voltage : V_GE [V]
400
Reverse Recovery Characteristics vs. ^-di/_dt
V _R=200V, I_F=30A, T _j=125°C
20
300
I_rr
15
200
10
100
t _rr
5
0
0
0
100 200 300 400 500 600
-di_{/dt [A/µsec]}
Transient Thermal Resistance
10⁰
IGBT
10 ^-1
10 ^-2
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
Pulse Width : P_W [sec]
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