1MB30-060 Datasheet, PDF (3/4 Pages) Fuji Electric – Fuji Discrete Package IGBT

Switching Time vs. R_G
V _CC=300V, I_C=30A, V_GE=±15V, T_j=25°C
t_on
1000
t _off
t_r
t_f
100
Switching Time vs. R_G
V _CC=300V, I _C=30A, V_GE=±15V, T_j=125°C
1000
t_off
t_f
t_on
100
t_r
10
0
100
Gate Resistance : R_G [Ω]
Capacitance vs. Collector-Emitter Voltage
T _j=25°C
10
C _ies
1
C _oes
0,1
C _res
0,01
0
5
10
15
20
25
30
35
Collector-Emitter Voltage : V_CE [V]
Reverse Recovery Time vs. Forward Current
300
V _R= 2 0 0 V , ^-di/_dt= 1 0 0 A / µ s e c
250
125°C
200
150
25°C
100
50
0
0
10
20
30
40
50
Forward Current : I_F [A]
10
0
100
Gate Resistance : R_G [Ω]
500
400
Dynamic Input Characteristics
T _j= 2 5 ° C
25
V =200V, 300V, 400V
CC
20
300
15
200
10
100
5
0
0
0 20 40 60 80 100 120 140 160
Gate Charge : Q_G [nQ]
Reverse Recovery Current vs. Forward Current
V _R=200V, ^-di/_dt=100A/µsec
10
8
125°C
6
4
25°C
2
0
0
10
20
30
40
50
Forward Current : I_F [A]