1MB08D-120 Datasheet, PDF (4/5 Pages) Fuji Electric – Fuji Discrete Package IGBT

Reverse Biased Safe Operating Area
+ V _GE=15V, -V _GE<15V, T_j< 125°C, R_G> 20Ω
18
16
14
12
10
8
6
4
2
0
0 200 400 600 800 1000 1200 1400
Collector-Emitter Voltage : V_CE [V]
Forward Voltage vs. Forward Current
25
T_j=125°C 25°C
20
15
10
5
0
0
1
2
3
4
Forward Voltage : V_F [V]
Typical Short Circuit Capability
V _CC= 8 0 0 V , R _G= 2 0Ω , T_j=125°C
200
80
150
t_SC
100
60
I_SC
40
50
20
0
0
5
10
15
20
25
Gate Voltage : V_GE [V]
250
Reverse Recovery Characteristics vs. ^-di/_dt
I_F=8A, T_j=125°C
25
200
150
20
I_rr
15
100
50
10
t _rr
5
0
0
0
100 200 300 400 500 600
-di_{/dt [A/µsec]}
10¹
10⁰
1 0^-1
1 0^-2
1 0^-4
Transient Thermal Resistance
FWD
IGBT
1 0^-3
1 0 ^-2
1 0^-1
10⁰
Pulse Width : P_W [sec]