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1MB08D-120 Datasheet, PDF (2/5 Pages) Fuji Electric – Fuji Discrete Package IGBT
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Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C
25
V GE=20V, 15V
20
12V
15
10
5
0
0
10V
8V
1
2
3
4
5
6
Collector-Emitter Voltage : VCE [V]
Collector Current vs. Collector-Emitter Voltage
T j=125°C
25
V GE=20V, 15V
20
12V
15
10V
10
5
8V
0
0
1
2
3
4
5
6
Collector-Emitter Voltage : VCE [V]
Collector-Emitter Voltage vs. Gate-Emitter Voltage
Tj= 2 5 ° C
12
10
8
6
4
IC=
16A
8A
2
4A
0
0
5
10
15
20
25
Gate-Emitter Voltage : VGE [V]
Switching Time vs. Collector Current
V CC= 6 0 0 V , R G= 2 0Ω , VGE=±15V, Tj=25°C
1000
t off
tf
ton
100
tr
10
0
2
4
6
8
10 12 14
Collector Current : IC [A]
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 1 2 5 ° C
12
10
8
6
4
I C=
16A
8A
2
4A
0
0
5
10
15
20
25
Gate-Emitter Voltage : VGE [V]
Switching Time vs. Collector Current
V CC= 6 0 0 V , RG= 2 0 Ω , VGE=±15V, Tj= 1 2 5 ° C
1000 toff
tf
ton
100
tr
0
2
4
6
8
10 12 14
Collector Current : IC [A]
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