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| YA875C10R Datasheet, PDF (3/5 Pages) Fuji Electric – Ultra Low IR Schottky Barrier Diode | |||
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YA875C10R (100V, 20A)
360
I0
VR=50V
FUJI Diode
http://www.fujisemi.com
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
VR Reverse Voltage (V)
3
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