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YA875C10R Datasheet, PDF (1/5 Pages) Fuji Electric – Ultra Low IR Schottky Barrier Diode | |||
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YA875C10R (100V, 20A)
Ultra Low IR Schottky Barrier Diode
Features
⢠Ultra Low IR
⢠Low VF
⢠Tj MAX = 175ËC
⢠High reliability at higher temperatures
Applications
⢠High frequency operation
⢠DC-DC converters
⢠AC adapter
Outline Drawings [mm]
TO-220AB
YA875C10
YA875C10
Note:1 Country of origin mark.
"P" is Made in PHILIPPINES.
http://www.fujisemi.com
FUJI Diode
Connection diagram
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25ËC Unless otherwise specified)
Item
Symbols
Repetitive peak reverse voltage
VRRM
Average output current
IO
Non-repetitive surge current **
IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
*Out put current of center tap full wave connection.
**Rating per element
Conditions
50Hz Square wave duty =1/2
Tc =144ËC
Sine wave, 10ms 1shot
Ratings
100
20 *
145
175
-40 to +175
Electrical characteristics (at Ta=25ËC Unless otherwise specified)
Item
Symbols
Forward voltage***
VF
Reverse current***
IR
Thermal resistance
Rth(j-c)
***Rating per element
Conditions
IF = 10 A
VR =VRRM
Junction to case
Maximum
0.86
20
1.75
Mechanical characteristics
Item
Mounting torque
Approximate mass
Conditions
Recommended torque
Ratings
0.3 to 0.5
2.0
Units
V
A
A
ËC
ËC
Units
V
µA
ËC/W
Units
Nâ¢m
g
1
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