YA846C04B Datasheet, PDF (3/12 Pages) Fuji Electric – Schottky Barrier Diode

1. SCOPE
This specification provides the ratings and the test requirement for FUJI SILICON DIODE
YA846C04B
2. OUT VIEW, MARKING, MOLDING RESIN, CHARACTERISTICS
(1)Out view is shown MS5D1917 9/12
(2)Marking is shown MS5D1917 9/12
It is marked to type name or abbreviated type name, polarity and Lot No.
(3)Molding resin
Epoxy resin UL : V-0
(4)Characteristics is shown MS5D1917 10/12～12/12
3. RATINGS
3.1 MAXIMUM RATINGS (at Tc=25℃ unless otherwise specified.)
ITEM
Repetitive peak surge reverse voltage
Repetitive peak reverse voltage
Average output current
Non-repetitive surge current ^**
Operating junction temperature
Storage temperature
SYMBOL
CONDITIONS
RATINGS
V_RSM tw=500ns,duty=1/40
45
V_RRM
45
Square wave duty =1/2
Io
30^*
Tc= 98 ℃
I_FSM Sine wave, 10ms 1shot
200
Tj
150
Tstg
-40～+150
* _{Out put current of center tap full wave connection.}
**_{Rating per element}
3.2 ELECTRICAL CHARACTERISTICS (at Tc=25℃ unless otherwise specified.)
ITEM
Forward voltage ^***
Reverse current ^***
Thermal resistance
SYMBOL
CONDITIONS
V_F
I_R
Rth(j-c)
I_F= 12.5A
V_R=V_RRM
Junction to case
***_{Rating per element}
MAXIMUM
0.55
1.0
2.0
3.3 MECHANICAL CHARACTERISTICS
Mounting torque
Approximate mass
Recommended torque
0.3～0.5
2.0
UNITS
V
V
A
A
℃
℃
UNITS
V
mA
℃/W
N・m
g
Fuji Electric Co.,Ltd.
MS5D1917 3/12
H04-004-03