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FMV06N60E Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
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FMV06N60E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
3.5
3.0
2.5
2.0
1.5
max.
1.0
typ.
0.5
0.0
-50 -25 0
25 50 75
Tch [°C]
100 125 150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6A,Tch=25 °C
14
12
Vcc= 120V
300V
10
480V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
100
10
1
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
5
4
max.
3
typ.
min.
2
1
0
-50 -25 0
25 50 75
Tch [°C]
100 125 150
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
103
Ciss
102
Coss
101
Crss
100
10-1
100
101
102
103
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=24 Ω
103
tf
td(off)
102
td(on)
101
tr
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
100
10-1
100
101
3
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