FMV06N60E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

FMV06N60E
Allowable Power Dissipation
PD=f(Tc)
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
14
12
10
8
6
4
2
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
I_D=f(V_DS):Duty=0(Single pulse),Tc=25 °c
10¹
10⁰
10^-1
t=
1µs
10µs
100µs
1ms
10^-2
Power loss w aveform :
Square waveform
P_D
t
10^-3
10⁰
10¹
10²
VDS [V]
D.C.
10³
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
2.8
VGS=4.5V
5.0V
2.6
2.4
2.2
2.0
1.8
5.5V _6.0V
10V
1.6
1.4
1.2
1.0
0.8
0
2
4
6
8
10
12
14
ID [A]
2