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FMV05N60E Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
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FMV05N60E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=2.8A,VGS=10V
4.0
3.5
3.0
2.5
2.0
max.
typ.
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=5.5A,Tch=25 °C
20
18
16
14
Vcc= 120V
12
300V
480V
10
8
6
4
2
0
0
10
20
30
40
50
60
70
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
100
10
1
0.1
0.01
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
3
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
5
4
max.
3
typ.
2
min.
1
0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
103
Ciss
102
Coss
101
Crss
100
10-2
10-1
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=24 Ω
103
102
td(off)
tf
td(on)
101
tr
100
10-1
100
101
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