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FMV05N60E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
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FMV05N60E
Allowable Power Dissipation
PD=f(Tc)
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
15
12
9
6
3
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.01
0.01
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
102
t=
1µs
101
10µs
100µs
100
10-1
Power loss waveform :
Square w aveform
PD
t
10-2
10-1
100
101
102
VDS [V]
1ms
DC
103
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
101
100
10-1
10-2
10-3
10-4
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
2.0
VGS=4.0V 4.5V
5V
6V
1.8
10V
1.6
1.4
1.2
1.0
0
2
4
6
8
10
12
14
ID [A]
2
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