English
Language : 

FMV03N60E Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
◁
FMV03N60E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=1.5A,VGS=10V
7
6
5
4
max.
3
typ.
2
1
0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3A,Tch=25 °C
20
18
16
14
12
Vcc= 120V
10
300V
480V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
100
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
5
4
max.
3
typ.
2
min.
1
0
-50 -25
0
25 50
75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
103
Ciss
102
Coss
101
Crss
100
10-2
10-1
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=27 Ω
103
10
102
td(off)
tf
1
101
td(on)
0.1
tr
0.01
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
10-1
100
101
VSD [V]
3
 ▷