English
Language : 

FMV03N60E Datasheet, PDF (2/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
◁
FMV03N60E
Allowable Power Dissipation
PD=f(Tc)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
10
8
6
4
2
0
0
4
8
12
16
20
24
VDS [V]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
0.1
0.01
0.01
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
102
101
100
t=
1µs
10µs
100µs
1ms
10-1
Power loss waveform :
Square waveform
10-2
PD
DC
t
10-3
10-1
100
101
102
103
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 µC
101
100
10-1
10-2
10-3
10-4
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
4.0
VGS=4.0V 4.5V
5V
3.5
6V
10V
3.0
2.5
2.0
1.5
0
2
4
6
8
10
ID [A]
2
 ▷