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FGW50N60VD Datasheet, PDF (3/8 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 600V / 50A | |||
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FGW50N60VD
Characteristics (Representative)
Graph.1
DC Collector Current vs TC
VGEâ¥+15V, Tjâ¤175ºC
140
120
100
80
Tjâ¤175â
60
40
20
0
25
50
75
100
125
150
175
Case Temperature [°C]
Graph.3
Typical Output Characteristics (VCE-IC)
Tj=25ºC
100
VGE= 20V
80
15V
12V
60
10V
40
20
8V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.5
Typical Transfer Characteristics
VGE=+15V
100
80
60
40
Tj=175â
Tj=25â
20
0
0
2
4
6
8
10
12
14
VGE [V]
3
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.2
Collector Current vs. switching frequency
VGE=+15V, TCâ¤175ºC, VCC=400V, D=0.5,
RG=10â¦, TC=100ºC
120
100
80
60
40
20
0
0
20
40
60
80
100
Collector-Emitter corrent : ICE [A]
Graph.4
Typical Output Characteristics (VCE-IC)
Tj=175ºC
100
VGE= 20V
80
15V
12V
60
10V
40
20
8V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.6
Gate Threshold Voltage vs. Tj
IC=50mA, VCE=20V
10
9
8
typ.
max.
7
6
min.
5
4
3
2
1
0
-50 -25 0
25 50 75 100 125 150 175
Tj [â]
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