FGW50N60VD Datasheet, PDF (2/8 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 600V / 50A

FGW50N60VD
Items
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal resistance
Items
Thermal Resistance, Junction-Ambient
Thermal Resistance, IGBT Junction to Case
Thermal Resistance, FWD Junction to Case
Symbols
trr2
Qrr
Conditions
VCC=400V
IF=35A
-diF/dt=200A/µs
Tj=175°C
Symbols
Rth(j-a)
Rth(j-c)_IGBT
Rth(j-c)_FWD
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Characteristics
min. typ. max.
Unit
-
0.49
-
µs
-
3.3
-
µC
min.
-
-
-
Characteristics
typ.
-
-
-
max.
50
0.417
0.735
Unit
°C/W
2