FGW50N60HD Datasheet, PDF (3/8 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 600V / 50A

FGW50N60HD
Characteristics (Representative)
Graph.1
DC Collector Current vs TC
VGE≥+15V, Tj≤175^ºC
140
120
100
80
Tj≤175℃
60
40
20
0
25
50
75
100
125
150
175
Case Temperature [°C]
Graph.3
Typical Output Characteristics (VCE-IC)
Tj=25^ºC
100
VGE=20V
15V
12V
10V 8V
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.5
Typical Transfer Characteristics
VGE=+15V
100
80
60
Tj=175℃ Tj=25℃
40
20
0
0
2
4
6
8
10
VGE [V]
3
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.2
Collector Current vs. switching frequency
VGE=+15V, TC≤175^ºC, VCC=400V, D=0.5,
RG=10Ω, TC=100^ºC
120
100
80
60
40
20
0
0
20
40
60
80
100
Collector-Emitter corrent : ICE [A]
Graph.4
Typical Output Characteristics (VCE-IC)
Tj=175^ºC
100
VGE=20V
80
15V
12V
10V
8V
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE [V]
Graph.6
Gate Threshold Voltage vs. Tj
IC=50mA, VCE=20V
8
7
max.
6
5
typ.
4
min.
3
2
1
0
-50 -25 0
25 50 75 100 125 150 175
Tj [℃]